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Registration Number

0213U005114, 0112U006695 , R & D reports

Title

Development of the equipment for the growth of silicon carbide single crystals by the method of sublimation

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Head

Nizhankovskiy Sergey Viktorovich,

Registration Date

11-03-2013

Organization

Institute for Single Crystals National Academy of Sciences of Ukraine

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The setup for the technological process of sublimation growth of silicon carbide single crystals is developed and manufactured. The perfomed testing of the sublimation chamber, vacuum system and resistive heating system shows that the setup has the characteristics required for the formation of temperature field in the crystallization zone where the temperature will uiniormly change from 1700 to 2300 centigrade degrees with a gradient close to 20 cent. deg/cm.

Product Description

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Коваленко Назар Олегович
Наливайко Дмитро Петрович

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2020-04-02