Registration Number
0214U005049,
0112U001212
, R & D reports
Title
Technology for radiation modification of AIIIBV semiconductor materials for sensor electronics
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Head
Bolshakova Inessa, Доктор технічних наук
Registration Date
30-01-2014
Organization
Lviv Polytechnic National University
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Studies have been carried out and technology developed for radiation modification of sensors based on InSb/i-GaAs and InAs/i-GaAs heterostructures in order to obtain sensors with parameters that would be stable in radiation operation conditions. The technology includes the processes of InSb- and InAs-based sensors neutron irradiation with subsequent annealing of the irradiated samples. Technological modes of InSb- and InAs-based sensors radiation modification have been defined, namely: optimal thermal-to-fast neutron ratio in flux, optimal irradiation temperature. Technological parameters of the irradiated samples annealing aimed at enhancing their parameters stability with time have been determined. Radiation modification of InAs-based sensors has been found to cause the improvement in radiation stability of their parameters. However, the use of thin-film sensors, based on complex InAs heterostructures produced with buffer layers, for radiation modification is ineffective due to leakage currents generation in buffer layers. Conducted studies have demonstrated the efficiency of radiation modification technology in enhancing the radiation resistance of InSb and InAs sensors. Radiation modified thin-film sensors InSb/i-GaAs have demonstrated the minimal change in parameters (up to 5%) when they were irradiated with neutrons up to F = 4·1017 cm-2, which speaks in favour of their high radiation stability. Such drift of the sensor signal can be subjected to electronic correction without lowering the accuracy of the magnetic field measurement.
Product Description
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Єрмакова В.В.
Большакова І.А.
Гумен С.С.
Загачевський Ю.В.
Ковальова Н.В.
Когут І.В.
Козаченко Л.М.
Кость Я.Я.
Макідо О.Ю.
Мороз А.П.
Палиняк І.В.
Тимошин С.В.
Шуригін Ф.М.
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2020-04-02
