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Information × Registration Number 0214U005448, 0114U001824 , R & D reports Title Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers. popup.stage_title Head Sheremet Volodymyr Mykolaiovych, Registration Date 30-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Developed basic design chips active elements based structures n + -n-n + GaN sources for radiation in the frequency range 90-110 GHz. The results of mathematical modelyuvannya.aktyvnyh elements of intervalley transfer of charge carriers. Past studies mock samples GaN n + -n-n + structures of small diameter showed the possibility of building on the basis of active microwave components. Product Description popup.authors Конакова Р.В. Кудрик Я.Я. Саченко А.В. Сліпокуров В.С. popup.nrat_date 2020-04-02 Close
R & D report
Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers.
Head: Sheremet Volodymyr Mykolaiovych. Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0214U005448
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Updated: 2026-03-21


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