Registration Number
0214U005448,
0114U001824
, R & D reports
Title
Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers.
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Head
Sheremet Volodymyr Mykolaiovych,
Registration Date
30-12-2014
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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Developed basic design chips active elements based structures n + -n-n + GaN sources for radiation in the frequency range 90-110 GHz. The results of mathematical modelyuvannya.aktyvnyh elements of intervalley transfer of charge carriers. Past studies mock samples GaN n + -n-n + structures of small diameter showed the possibility of building on the basis of active microwave components.
Product Description
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Конакова Р.В.
Кудрик Я.Я.
Саченко А.В.
Сліпокуров В.С.
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2020-04-02
