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Information × Registration Number 0214U005449, 0114U001825 , R & D reports Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 30-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Developed physical and technological bases of creating heat resistant contact metallization of nanostructure-based diffusion barriers TiВх to fosfidindiyevyh epitaxial structures. Standing unreliable criterion of Gunn diodes terahertz range from fosfidindiyevyh epitaxial structures with integrated buffer "elastic" nanoporous layers in the presence of nonlinearity current-voltage characteristics. Product Description popup.authors Конакова Р.В. Кудрик Я.Я. Мілєнін В.В. Новицький С.В. Саченко А.В. Сліпокуров В.С. Шеремет В.М. popup.nrat_date 2020-04-02 Close