Registration Number
0214U005449,
0114U001825
, R & D reports
Title
Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers
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Head
Konakova Raisa Vasil'evna,
Registration Date
30-12-2014
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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Developed physical and technological bases of creating heat resistant contact metallization of nanostructure-based diffusion barriers TiВх to fosfidindiyevyh epitaxial structures. Standing unreliable criterion of Gunn diodes terahertz range from fosfidindiyevyh epitaxial structures with integrated buffer "elastic" nanoporous layers in the presence of nonlinearity current-voltage characteristics.
Product Description
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Конакова Р.В.
Кудрик Я.Я.
Мілєнін В.В.
Новицький С.В.
Саченко А.В.
Сліпокуров В.С.
Шеремет В.М.
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2020-04-02
