Registration Number
0214U006158,
0110U006270
, R & D reports
Title
Research and development of ion-plasma technologies for formation of silicon composites at introduction of stimulating self-organization processes impurites.
popup.stage_title
Head
Evtukh Anatoliy Antonovych,
Registration Date
13-02-2014
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
popup.description2
The aim of the project (phase): the investigation of the effect size of the nanocrystals, their density, the parameters of the interfaces and the dielectric matrix on the electrical and optical properties of nanocomposite SiO2(Si) films, containing Si nanocrystals in the dielectric matrix SiO2. A comprehensive study of the structural properties of silicon-enriched SiOx films obtained by ion - plasma spattering (IPS) and plasma enhanced chemical vapor deposition (PE CVD) depending on technological regimes. It was established that the change in the ratio of working gases O2/Ar for IPS and N2O/SiH4 for PE CVD methods leads to the controlled change of the Si content in the initial SiOx films at their preparation . The shift of the photoluminescence (PL) peak in the low-energy region has been revealed. It can be explained by the change (increase) in diameter nanocrystalline inclusions in nanocomposite SiO2(Si) film with the increase in the excess silicon content in the initial SiOx films. Changing the ratio of working gas during deposition N2O/SiH4 PE CVD method can change the diameter of the nanoclusters in SiO2(Si) film. It leads to the shift of the PL peak . The dependence of the maximum capacity of the MIS structure on the frequency of test signal and the linear voltage sweep rate at accumulation mode in the surface region of the semiconductor has been determined. The magnitude of the maximum capacity of MIS structure increases with decreasing the frequency of the test signal and the increase in the sweep speed of the line voltage.
Product Description
popup.authors
Євтух Анатолій Антонович
Братусь Олег леонідович
popup.nrat_date
2020-04-02
