Registration Number
0214U006465,
0111U004895
, R & D reports
Title
Research and development of technology of refinement of technical silicon by physico-metallurgical method.
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Head
Gasik M.I.,
Registration Date
28-04-2014
Organization
National Metallurgical Academy of Ukraine
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The study was conducted under the conditions established in the National Metallurgical Academy of Ukraine laboratory setup tested technology of refining metallurgical silicon to produce quality material that can be used in solar cells and tested for its implementation necessary industrial equipment. Confirmed the feasibility and promise of the proposed technology. Retrieved refined silicon solar quality resistivity Om.sm to 0.45, corresponding to PEO SOG-Si. Experimentally proven ability to delete by vacuum electron beam refining elements, pressure vapor which is much less than the vapor pressure of silicon Studies have shown the possibility of after electron-beam melting polysilicon grains with an average diameter greater than 1 mm, a thickness exceeding contemporary solar silicon wafer and shows how you can use it for making plates SOG-Si Experimentally proved the possibility of defect-free single crystal silicon structure when used as a raw material pre-refined cathode ray technology MG-Si
Product Description
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Ганцеровский О.Г.
Зубов В,Л.
Каленіна С.Я.
Переверзев О.Д.
Попова Л.Є
Рогачов І.П.
Сидоренко В.В.
Таран О.Ю.
Терешкова Н.П.
Трунова І.В.
Цвітков І.В.
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2020-04-02
