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Information × Registration Number 0214U006929, 0110U004551 , R & D reports Title Physical mechanisms of nanosized structure formation on the surface of semiconductors at pulsed laser irradiation. popup.stage_title Head Vlasenko Alexander Ivanovich, Registration Date 28-03-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Nanostructure are receive on the CdTe surface after irradiation by the second garmonics of neodymium laser (530 nm) with a pulsewidth 7 ns. The lateral sizes of dome-shaped structures are equal d =(11,6-15,6) nm, height h = 1,5 nm at the intensity I=12 MW/cm2. At irradiation at I=18 MW/cm2, I.e. less than melting threshold of crystal the density of nanostructure is increased. At irradiation with the intensity of the melting threshold (I=20,8 MW/cm2) the structures of more largeness are formed: d =(34-80 ) nm, h = (5-16) nm. The raman scattering spectrums of the nanostructured CdTe crystals are received. Product Description popup.authors Байдулаєва Алія Бойко Микола Іванович Велещук Віталій Петрович Гнатюк Володимир Анастасійович popup.nrat_date 2020-04-02 Close