Registration Number
0214U006929,
0110U004551
, R & D reports
Title
Physical mechanisms of nanosized structure formation on the surface of semiconductors at pulsed laser irradiation.
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Head
Vlasenko Alexander Ivanovich,
Registration Date
28-03-2014
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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Nanostructure are receive on the CdTe surface after irradiation by the second garmonics of neodymium laser (530 nm) with a pulsewidth 7 ns. The lateral sizes of dome-shaped structures are equal d =(11,6-15,6) nm, height h = 1,5 nm at the intensity I=12 MW/cm2. At irradiation at I=18 MW/cm2, I.e. less than melting threshold of crystal the density of nanostructure is increased. At irradiation with the intensity of the melting threshold (I=20,8 MW/cm2) the structures of more largeness are formed: d =(34-80 ) nm, h = (5-16) nm. The raman scattering spectrums of the nanostructured CdTe crystals are received.
Product Description
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Байдулаєва Алія
Бойко Микола Іванович
Велещук Віталій Петрович
Гнатюк Володимир Анастасійович
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2020-04-02
