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Information × Registration Number 0214U008306, 0114U003543 , R & D reports Title Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices popup.stage_title Head Puzikov Vyacheslav Mikhailovich, Registration Date 25-12-2014 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Technological processes of manufacture of high-resistance protective layers based on nanocrystalline films of SiC. High microwave pin diodes with a protective coating showed a high dimensional stability at elevated temperature. Protective films on the basis of nanocrystalline SiC exhibit stable structure and electrical parameters in the temperature range 2-600 K and the magnetic field to 14 Tesla Product Description popup.authors Козловський Анатолый Антонович Мудрова Ельвіра Олександрівна Семенов Олександр Володимирович Скорик Станіслав Миколайович Шевченко Максим Олегович шморгун Віта Петрівна popup.nrat_date 2020-04-02 Close
R & D report
Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices
Head: Puzikov Vyacheslav Mikhailovich. Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0214U008306
1 documents found

Updated: 2026-03-22


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