Registration Number
0214U008306,
0114U003543
, R & D reports
Title
Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices
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Head
Puzikov Vyacheslav Mikhailovich,
Registration Date
25-12-2014
Organization
Institute for Single Crystals National Academy of Sciences of Ukraine
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Technological processes of manufacture of high-resistance protective layers based on nanocrystalline films of SiC. High microwave pin diodes with a protective coating showed a high dimensional stability at elevated temperature. Protective films on the basis of nanocrystalline SiC exhibit stable structure and electrical parameters in the temperature range 2-600 K and the magnetic field to 14 Tesla
Product Description
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Козловський Анатолый Антонович
Мудрова Ельвіра Олександрівна
Семенов Олександр Володимирович
Скорик Станіслав Миколайович
Шевченко Максим Олегович
шморгун Віта Петрівна
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2020-04-02
