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Information × Registration Number 0215U000031, 0111U006452 , R & D reports Title 3.Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 15-01-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 3.Technology route for manufacturing microwave diode based on III-Nitrides has been elaborated: contact metallization fabrication, heat sink formation, diode's mesa manufacturing. Gunn diode has been made with n+-n-n+ GaN epitaxial structure grown on heavy doped 4Н-SiC substrate by HVPE with horizontal reactor. Parameters obtained provided the diode's power of 200 mW at frequency of 200 GHz with matched load in persistent regime. Product Description popup.authors Алейніков Андрій Борисович Захаренко Оксана Миколаївна Кладько Василь Петрович Коломис Олександр Федорович Конакова Раїса Василівна Кочелап Вячеслав Олександрович Кучук Андріан Володимирович Наумов Андрій Вадимович Райчева Валентина Григорівна Рудзінський Віктор Станіславович Стрільчук Віктор Васильович popup.nrat_date 2020-04-02 Close
R & D report
3.Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique
Head: Belyaev Alexandr. 3.Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0215U000031
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Updated: 2026-03-23


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