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Information × Registration Number 0215U003443, 0114U001970 , R & D reports Title Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy popup.stage_title Head Belyaev Alexander, Доктор фізико-математичних наук Registration Date 30-01-2015 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Growth technology of AlGaN/InGaN/GaN/Al2O3 light emitting structures with high quality Inх2Ga1-х2N/p-AlхGa1-хN, p-AlхGa1-хN/p-GaN heterointerfaces as well as perfect morphology of the contact layers has been optimized. The technology provides energy efficiency of the LED based on these structures higher 80 Lm/W. The regimes for ion implantation of iron into GaN/Al2O3 have been proposed aimed the creation of stop layers to prevent propagation of the dislocations. Product Description popup.authors popup.nrat_date 2020-04-02 Close