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Registration Number

0215U003443, 0114U001970 , R & D reports

Title

Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy

Head

Belyaev Alexander, Доктор фізико-математичних наук

Registration Date

30-01-2015

Organization

Institute of Semiconductor Physics of NAS of Ukraine

Description

Growth technology of AlGaN/InGaN/GaN/Al2O3 light emitting structures with high quality Inх2Ga1-х2N/p-AlхGa1-хN, p-AlхGa1-хN/p-GaN heterointerfaces as well as perfect morphology of the contact layers has been optimized. The technology provides energy efficiency of the LED based on these structures higher 80 Lm/W. The regimes for ion implantation of iron into GaN/Al2O3 have been proposed aimed the creation of stop layers to prevent propagation of the dislocations.

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