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Information × Registration Number 0216U007050, 0115U004534 , R & D reports Title Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod popup.stage_title Head Kladko Vasyl Petrovych, Registration Date 23-03-2016 Organization V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine popup.description2 Equipment for cutting of InSb single crystals ingots and polishing of wafers is developed. Ion source for ion implantation of beryllium was manufactured. Two base technological processes (for planar and meza-type) were created. Technological pases, phototemplates and all thechnological operation for creation of photodetectors were developed and detalized. An experiment on the formation of p-n junction after Mg and Be ion implantation was carried out. Technology of implanted structure annealing was developed. It was shown that absence of detective layer and temperatures over 400 C leads to enreaching the surface of wafer by Sb atoms. Product Description popup.authors Гудименко О.Й. Корбутяк Д.В. Мельник В.П. Оберемок О.С. Попов В.Г. Романюк Б.М. Сапон С.В. Сафрюк Н.В. Сукач А.А. Телега В.М. Тетьоркін В.В. popup.nrat_date 2020-04-02 Close