Registration Number
0216U007050,
0115U004534
, R & D reports
Title
Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod
popup.stage_title
Head
Kladko Vasyl Petrovych,
Registration Date
23-03-2016
Organization
V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine
popup.description2
Equipment for cutting of InSb single crystals ingots and polishing of wafers is developed. Ion source for ion implantation of beryllium was manufactured. Two base technological processes (for planar and meza-type) were created. Technological pases, phototemplates and all thechnological operation for creation of photodetectors were developed and detalized. An experiment on the formation of p-n junction after Mg and Be ion implantation was carried out. Technology of implanted structure annealing was developed. It was shown that absence of detective layer and temperatures over 400 C leads to enreaching the surface of wafer by Sb atoms.
Product Description
popup.authors
Гудименко О.Й.
Корбутяк Д.В.
Мельник В.П.
Оберемок О.С.
Попов В.Г.
Романюк Б.М.
Сапон С.В.
Сафрюк Н.В.
Сукач А.А.
Телега В.М.
Тетьоркін В.В.
popup.nrat_date
2020-04-02
