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Information × Registration Number 0217U001002, 0115U005017 , R & D reports Title Terahertz properties of semiconductor nanostructures with high carrier mobility to create radiation detectors. popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 04-01-2017 Organization Institute of Semiconductor Physics popup.description2 A new approach is developed for detection infrared radiation by narrow-gap semiconductor compounds CdHgTe based on piezopotential arising on heterojunction of CdHgTe and the substrate. The physical model of thermomechanical deformation arising at the interface is proposed epitaxial film-substrate, on the basis of heterostructure CdHgTe/Si of design prototype photodetector for detecting infrared (IR) radiation without the use of electric displacement and cooling. Also studied subTHz detector characteristics of FET GaAs/InGaAs heterostructure with the gate based on Schottky heterojunction. It is shown that HEMT GaAs/InGaAs has a high sensitivity sub-THz radiation detector, and an output signal has a nonlinear dependence on the gate voltage of the transistor. Estimated volt-watt sensitivity of the detector is ~ 100 V/W, and NEP is NEP = 1·10-10 W/Hz1/2, taking into account the Johnson's noise. Product Description popup.authors Гуменюк-Сичевська Жанна Віталіївна Забудський Вячеслав Володимирович Кухтарук Наталія Іванівна Мележик Євген Олександрович Сахно Микола Вадимович Сизов Федір Федорович Цибрій Зеновія Федорівна Шевчик-Шекера Анна Володимирівна popup.nrat_date 2020-04-02 Close