Registration Number
0217U001002,
0115U005017
, R & D reports
Title
Terahertz properties of semiconductor nanostructures with high carrier mobility to create radiation detectors.
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Head
Sizov F.F., Доктор фізико-математичних наук
Registration Date
04-01-2017
Organization
Institute of Semiconductor Physics
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A new approach is developed for detection infrared radiation by narrow-gap semiconductor compounds CdHgTe based on piezopotential arising on heterojunction of CdHgTe and the substrate. The physical model of thermomechanical deformation arising at the interface is proposed epitaxial film-substrate, on the basis of heterostructure CdHgTe/Si of design prototype photodetector for detecting infrared (IR) radiation without the use of electric displacement and cooling. Also studied subTHz detector characteristics of FET GaAs/InGaAs heterostructure with the gate based on Schottky heterojunction. It is shown that HEMT GaAs/InGaAs has a high sensitivity sub-THz radiation detector, and an output signal has a nonlinear dependence on the gate voltage of the transistor. Estimated volt-watt sensitivity of the detector is ~ 100 V/W, and NEP is NEP = 1·10-10 W/Hz1/2, taking into account the Johnson's noise.
Product Description
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Гуменюк-Сичевська Жанна Віталіївна
Забудський Вячеслав Володимирович
Кухтарук Наталія Іванівна
Мележик Євген Олександрович
Сахно Микола Вадимович
Сизов Федір Федорович
Цибрій Зеновія Федорівна
Шевчик-Шекера Анна Володимирівна
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2020-04-02
