Registration Number
0217U007009,
0117U007006
, R & D reports
Title
Novel LED heterostructures based on n-ZnO nanostructures and p-GaN epitaxial layers for high-performance ultraviolet radiation sources and energy-saving lighting systems
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Head
Nikolenko Andriy Sergiyovych,
Registration Date
21-12-2017
Organization
Institute of Semiconductor Physics
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Search for optimal parameters for the synthesis of zinc oxide (ZnO) nanostructures on p-type substrates of gallium nitride (GaN) has been carried out. The morphology, structural, electronic and optical properties of ZnO nanostructures obtained by methods of hydrothermal synthesis and vapor phase growth were studied. The influence of precursor mixing time on the properties of ZnO nanowires grown by the hydrothermal method was studied. It is established that the method of vapor phase growth allows to obtain ZnO nano- and microstructures with better adhesion to the substrate in comparison with the hydrothermal method. Distribution of structural and vibrational properties in individual ZnO nanowires with submicron spatial resolution was studied using scanning micro-Raman spectroscopy. Optical and structural properties of multilayer doped GaN structures grown on sapphire substrates by molecular beam epitaxy were studied by infrared reflection spectroscopy.
Product Description
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Бойко М.І.
Коломис О.Ф.
Насєка В.М.
Пилипенко Н.А.
Рарата С.В.
Стрельчук В.В.
Циканюк Б.І.
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2020-04-02
