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Information × Registration Number 0218U001615, 0114U000940 , R & D reports Title Research and development of multi-functional two- and three-terminal semiconductor nanosensors popup.stage_title Head Kochelap V A, Registration Date 04-04-2018 Organization Institute of Semiconductor Physics popup.description2 The results of research and development of new two- and three-terminal electronic nanosensors based on hybrid 1D / 2D quantum nanostructures made from nitride-halide compounds, in particular, field effect transistor and diode GaN / AlGaN FET and HEMT structures with nanowires are presented. The results demonstrate the prospects of this research for the creation of a line of multifunctional nanosensors on the base of a single technological platform for applications in integrated multi-sensory systems of new generation that are projected. Product Description popup.authors Бєляєв О.Є. Бойко I.I. Захаренко О.М. Кладько В.П. Коротєєв В.В. Кочелап В.О.. Кухтарук С.М. Лiннiк Т.Л. Наумов А.В. Наумов В.В. Пiпа В.Й. Райчев О.Е. Райчева В.Г. Рудзинський В.С. Сингаївська Г.I. Соколов В.М. Соскiн С.М. Стрiха М.В. Шека Г.К. Яшин Е.I. popup.nrat_date 2020-04-02 Close