Registration Number
0218U001615,
0114U000940
, R & D reports
Title
Research and development of multi-functional two- and three-terminal semiconductor nanosensors
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Head
Kochelap V A,
Registration Date
04-04-2018
Organization
Institute of Semiconductor Physics
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The results of research and development of new two- and three-terminal electronic nanosensors based on hybrid 1D / 2D quantum nanostructures made from nitride-halide compounds, in particular, field effect transistor and diode GaN / AlGaN FET and HEMT structures with nanowires are presented. The results demonstrate the prospects of this research for the creation of a line of multifunctional nanosensors on the base of a single technological platform for applications in integrated multi-sensory systems of new generation that are projected.
Product Description
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Бєляєв О.Є.
Бойко I.I.
Захаренко О.М.
Кладько В.П.
Коротєєв В.В.
Кочелап В.О..
Кухтарук С.М.
Лiннiк Т.Л.
Наумов А.В.
Наумов В.В.
Пiпа В.Й.
Райчев О.Е.
Райчева В.Г.
Рудзинський В.С.
Сингаївська Г.I.
Соколов В.М.
Соскiн С.М.
Стрiха М.В.
Шека Г.К.
Яшин Е.I.
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2020-04-02
