Registration Number
0218U001670,
0115U002975
, R & D reports
Title
Investigation of non-equilibrium charge carriers and phonons in complex nanostructures based on the А3В5 semiconductor compounds.
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Head
Poroshin Volodymyr Mykolayovich,
Registration Date
16-05-2018
Organization
Institute of physics NASU
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The results of theoretical consideration of the phenomenon of the ambipolar lateral injection and simulation of the injection-kind LED p-i-n structures based on the ІІІ-V and III-nitride compounds have been presented. It is shown that the ambipolar lateral injection enables to obtain the non-equilibrium electron-hole plasma with a sufficient density and to implement the inverse population for the band-to-band photo-transitions and amplification of the corresponding radiation. There have been performed calculations of the electron transfer from the quantum well into the short-period superlattice fragment in the heterostructures based on the III-V semiconductor compounds which is initiated by heating charge carriers by the applied longitudinal electric field. Possibility to achieve inversion of the population in the size quantization subbands under quite small fields is demonstrated. The results of studies of the electric transport properties in the n-AlxGa1-xAs/GaAs heterostructures under the conditions of the lateral injection of the minority charge carriers are presented. The technique of fabrication of the injecting electric contacts and results of studies of the injection influence on the shape of the current-voltage characteristics are described. The recommendations concerning applied usage of the obtained results are given (obtaining of the electromagnetic radiation in the terahertz and visible spectral ranges).
Product Description
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Більовський Павло Антонович
Вайнберг Віктор Володимирович
Винославський Михайло Миколайович
Пилипчук Олександр Сергійович
Порошин Володимир Миколайович
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2020-04-02
