Registration Number
0218U003186,
0117U003568
, R & D reports
Title
Theoretical and experimental research of current flow mechanisms in n+ and n+-n-Si ohmic contacts with high electron depletion in contact region
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Head
Konakova R.V.,
Registration Date
25-01-2018
Organization
Institute of Semiconductor Physics
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The diffusion scattering of X-rays in 2Q-, Q-w- and w-scans used to obtain the density of structural defects in n+ Si layers formed by diffusion of phosphorus, the homogeneity of their distribution over the plate, and the internal mechanical stresses and dislocation concentrations were calculated. It is established that the optimum parameters of heat treatment during phosphor diffusion to create n+ layer in silicon with a thickness of 0.5 microns are: T annealing 925 oC, 23 min - at lower T there is a significantly higher number of defects in the vacancy type, and at higher levels there is a significant increase in length dislocations that can sprout into the active region. The temperature dependence of the specific resistance rc(T) of contacts on the basis of Au-Ti-Pd-n+-n-n+-Si was experimentally investigated and the incident temperature dependence, which is well described by the thermoionic-field mechanism of current transfer, is realized
Product Description
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Дуб М.М.
Капітанчук Л.М.
Кудрик Я.Я.
Міленін В.Г.
Охріменко О.Б.
Редько Р.А.
Редько С.М.
Романець П.М.
Сай П.О.
Саченко А.В.
Сліпокуров В.С.
Шинкаренко В.В.
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2020-04-02
