Registration Number
0218U003990,
0118U004772
, R & D reports
Title
Development of the new technological principles for creation of planar composite nanostructures based on oxide silicon with reactive inductive impedance.
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Head
Evtukh Anatoliy Antonovych,
Registration Date
11-10-2018
Organization
Institute of Semiconductor Physics
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As a result of the work on the first stage, the measurements of the electrical characteristics of silicon structures with non-stoichiometric silicon-enriched SiOx films and SiO2 composite films with Si nanocrystals and metallic inclusions were performed. As a result of the analysis of the conductivity of the above-mentioned films (based on the performed measurements), the mechanisms of their electrical conductivity, depending on various influences (annealing environment, measurement temperature, applied voltage), were established. It is shown that annealing in argon at T = 1100 of silicon-enriched SiOx films reduces the electrical conductivity at higher voltages compare to annealing in nitrogen, and in the same films with metallic inclusions the situation is reversed. The presence of metallic inclusions also leads to a significant increase in current leakage at low voltages. The magnitude of these leakage currents depends on the annealing environment. The obtained results of the I-V characteristics analysis indicate the necessity of investigating the capacitive characteristics of SiOx films annealed in argon and SiOx (Fe) films annealed in nitrogen to determine the conditions for obtaining of the effect of inductive type reactive impedance.
Product Description
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Євтух Анатолій Антонович
Братусь Олег Леонідович
Кизяк Анатолій Юрійович
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2020-04-02
