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Information × Registration Number 0219U100421, 0116U003504 , R & D reports Title Thin film oxide materials with n- and p-type conductivity for photovoltaic devices popup.stage_title Head Lashkarov Heorhii V., Доктор фізико-математичних наук Registration Date 12-02-2019 Organization Institute for Problems in Materials Science popup.description2 The work presents results of growth zinc oxide films doped by aluminum, nitrogen and silver dopants as well as the results of growth thin film NiO and CuAlO2 with p-type conductivity. The results discover correlation between technological parameters from one side and electrical, photoelectrical and optical properties from other side. Computer simulation of Al donor impurities behavior in ZnO was carried out. Product Description popup.authors popup.nrat_date 2020-04-02 Close