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Registration Number

0219U100421, 0116U003504 , R & D reports

Title

Thin film oxide materials with n- and p-type conductivity for photovoltaic devices

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Head

Lashkarov Heorhii V., Доктор фізико-математичних наук

Registration Date

12-02-2019

Organization

Institute for Problems in Materials Science

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The work presents results of growth zinc oxide films doped by aluminum, nitrogen and silver dopants as well as the results of growth thin film NiO and CuAlO2 with p-type conductivity. The results discover correlation between technological parameters from one side and electrical, photoelectrical and optical properties from other side. Computer simulation of Al donor impurities behavior in ZnO was carried out.

Product Description

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2020-04-02