Registration Number
0219U102100,
0119U002247
, R & D reports
Title
Formation of graded-gap film structures based on CdSexTe1-x for solar cells and optimization of their properties
popup.stage_title
Head
Registration Date
19-12-2019
Organization
Lviv Polytechnic National University
popup.description2
From the first principles the wave functions of the electron, the crystalline potential and the electronic structure, density of the states of the CdSeхTe1-х solid solution were calculated.
A quantum-mechanical problem of a charge carrier scattering at near-acting potential for various types of point defects for a CdSeхTe1-х solid solution is solved.
Optimal technological regimes for deposition of thin semiconductor films of A2B6 binary compounds have been established and worked out.
Experimental and theoretical investigation of the structural, optical, electrophysical and optoelectric characteristics of semiconductor films of A2B6 binary compounds and surface barrier structures based on them has been carried out.
Technological regimes for the formation semiconductor films of solid solutions of A2B6 compounds, in particular, of CdSeTe solid solution have been established.
Product Description
popup.authors
Honchar Fedir M.
Danylov Andrii B.
Zachek Ihor R.
Zmiiovska Emilia O.
Kashuba Andrii I.
Krukovskiy Semen I.
Lisnykh Demian O.
Lopatynskyi Ivan Ye.
Malyk Orest P.
Orlov Oleksandr O.
Petrus Roman Yu.
Semkiv Ihor V.
Syrotyuk Stepan V.
Ukrainets Natalia A.
Tsyupko Fedir I.
popup.nrat_date
2020-04-02
