Registration Number
0220U102388,
0115U002975
, R & D reports
Title
Investigation of non-equilibrium charge carriers and phonons in complex nanostructures based on the А3В5 semiconductor compounds.
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Head
Poroshyn Volodymyr M, Доктор фізико-математичних наук
Registration Date
12-03-2020
Organization
Institute of physics of NAS of Ukraine
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The features of the bipolar charge carriers transport in the heterostructures based on the III-V semiconductor compounds with the asymmetric double quantum wells in the lateral electric field and emission of the infrared light caused by heating the charge carriers by the field have been studied. It is established that under the conditions of presence of the charge carriers with both signs (electrons and holes) the dependences of the current and intersubband luminescence intensity vs electric field depend on the barrier width between the wells. In the case of the thick barriers the high frequency current oscillations are found which arise in the fields less the threshold value of the Gunn kind instability and within time periods less than 400 ns, i.e., when the acoustoelectric phenomena are insubstantial. The mechanism of appearance of the observed current oscillations is proposed which is connected with the spatial transfer of the charge carriers – electrons and holes from the undoped quantum wells into the doped ones that results in a decrease of the electron and hole mobilities due to enhancing the impurity scattering and an increase interband electron-hole recombination rate. The difference in behavior of the current and intersubband terahertz emission at different barrier widths between wells is explained by competition of the two processes – the radiative electron-hole recombination in the narrow wells and tunneling of holes from the narrow wells into the wide ones.
Product Description
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Biliovskii Pavlo A
Vainberg Viktor V
Vinoslavskii Mikhailo M
Kochelap Vyacheslav O
Pylypchuk Oleksandr S
Poroshin Volodymyr M
Chornomorets Nadiуa F
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2020-04-01
