Registration Number
0220U102980,
0119U000537
, R & D reports
Title
Optics of non-equilibrium charge carriers in the complex heterostructures based on the III-V semiconductor compounds.
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Head
Vainberg Viktor V, Доктор фізико-математичних наук
Registration Date
03-07-2020
Organization
Institute of Physics of National Academy of Sciences of Ukraine
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The optical phenomena in the asymmetric selectively doped heterostructures n-InxGa1-xAs/GaAs and n-AlxGa1-xAs/GaAs have been studied under the conditions of bipolar drift of the non-equilibrium electron-hole pairs. The energy spectrum of electrons and holes in quantum wells (QW) of such structures is calculated. The bipolar drift length in n-InxGa1-xAs/GaAs has been experimentally shown to be larger than in bulk materials. Due to this fact the intensive electroluminescence in the near infrared spectral range arises under strong electric fields in a large length along QW. The long lasting negative photoconduction of the structures has been studied. The model to explain obtained results is proposed. The technique to fabricate planar injection contacts in QW of the given structures is developed and their characteristics are studied. The theoretical model of obtaining the inversed population of charge carriers at the double lateral injection in QW based on the III-V compounds is studied. The recommendations for applications of results in development of the optoelectronic devices for the near and far infrared spectral ranges are given
Product Description
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Biliovskii Pavlo A
Vainberg Viktor V
Vinoslavskii Mikhailo M
Dubikovskii Oleksandr V
Kochelap Viacheslav O
Pylypchuk Oleksandr S
Poroshyn Volodymyr M.
Chornomorets Nadia F
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2020-07-03
