Registration Number
0223U001231,
0122U002564
, R & D reports
Title
Modification and investigation of optoelectronic properties of ZnO thin films and nanostructures for photovoltaic applications
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Head
Vasin Andrii V., Доктор фізико-математичних наук
Registration Date
26-01-2023
Organization
VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
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Nanoscale inhomogeneity of doping of thick films was established, namely, increased electrical conductivity of intergrain boundaries. In addition, inhomogeneity of doping in thickness was revealed, namely, increased electrical conductivity of the lower interface layer. It is assumed that the increased conductivity of intergrain boundaries and the lower interface layer is related to the diffusion of atomic hydrogen through channels with reduced density and increased defectivity, that is, along intergrain boundaries. Work was carried out to find optimized conditions for the formation of layers of zinc oxide nanorods on the surface of a zinc oxide film in order to optimize the optical properties of electrically conductive windows made of zinc oxide for solar cells: maximum transmittance, minimum reflection. It was established that the use of thin films with a small grain size allows growing finely dispersed layers of nanorods. On samples of two-layer structures, with a layer of zinc oxide nanowires about 0.8 μm thick on unalloyed seed layers, an increase in transparency of more than 10% was obtained compared to the initial thin layer of zinc oxide without nanowires.
Product Description
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Homeniuk Yurii V.
Kysil Dmytro V.
Nazarov Oleksii M.
Rusavsky Andriy V.
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2023-01-26
