Registration Number
0223U001316,
0121U111398
, R & D reports
Title
Development of a highly efficient beryllium ion injector, its implementation into an ion implanter and development of infrared photodetector technology for guidance systems
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Head
Baturin Volodymyr A., Кандидат фізико-математичних наук
Registration Date
27-01-2023
Organization
Institute of Applied Physics National Academy of Sciences of Ukraine
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An inexpensive, reliable and universal injector of beryllium ions based on a spray Penning source of metal or gas ions has been developed; The beryllium ion injector is inserted into ion implanter MPB-202 BALZERS of the Institute of Semiconductor Physics. A series of experiments on the implantation of beryllium ions with energy E1 = 40 keV and E2 = 120 keV into stilbene antimonide was carried out, and a photodiode with a p-n junction in the infrared spectrum was manufactured. The size of the active area of the photodiode is 1.3 mm; A technological map for the production of photodiode structures based on indium antimonide has been developed.
Product Description
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Yeryomin Sergiy O.
Baturin Volodymyr A.
Karpenko Oleksandr Yu
Kosulia Oleksandr V.
Lytvynov Petro O
Pustovoitov Serhii O
Poenko Oleh Yu
Sobor Yurii I.
Shutko Valerij O
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2023-01-27
