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Information × Registration Number 0223U001316, 0121U111398 , R & D reports Title Development of a highly efficient beryllium ion injector, its implementation into an ion implanter and development of infrared photodetector technology for guidance systems popup.stage_title Head Baturin Volodymyr A., Кандидат фізико-математичних наук Registration Date 27-01-2023 Organization Institute of Applied Physics National Academy of Sciences of Ukraine popup.description2 An inexpensive, reliable and universal injector of beryllium ions based on a spray Penning source of metal or gas ions has been developed; The beryllium ion injector is inserted into ion implanter MPB-202 BALZERS of the Institute of Semiconductor Physics. A series of experiments on the implantation of beryllium ions with energy E1 = 40 keV and E2 = 120 keV into stilbene antimonide was carried out, and a photodiode with a p-n junction in the infrared spectrum was manufactured. The size of the active area of the photodiode is 1.3 mm; A technological map for the production of photodiode structures based on indium antimonide has been developed. Product Description popup.authors Yeryomin Sergiy O. Baturin Volodymyr A. Karpenko Oleksandr Yu Kosulia Oleksandr V. Lytvynov Petro O Pustovoitov Serhii O Poenko Oleh Yu Sobor Yurii I. Shutko Valerij O popup.nrat_date 2023-01-27 Close