Registration Number
0223U002095,
0120U102043
, R & D reports
Title
Crystal-chemical approach to the development of inorganic quantum materials
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Head
Akselrud Lev H.,
Registration Date
09-02-2023
Organization
Ivan Franko National University of Lviv
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Object – multi-component compounds with metallic and semi-metallic components, which exhibit unique physical properties and can be used for low-temperature spintronics, as topological insulators and quantum materials. Aim of the work –synthesis of new inorganic compounds for quantum materials and determination of their crystallographic characteristics, quantitative parameters of chemical bonding, magnetic and transport properties. The investigation is aimed at establishing a general system and algorithms for the relationship between structural features, character of chemical bonds and physical properties – the basis for development of new generation quantum materials. Methods – synthesis of alloys, heat treatment, differential scanning calorimetry, X-ray phase, microstructural, spectral and structural analysis, electronic structure calculation, measurement of magnetic, electrical and transport properties. The new structurally modified compounds were synthesized, both in the form of high-quality single crystals and powdered samples. EuPd3Ga2 – candidate in quantum materials; in the range of 0–15 K can be a reservoir of plane-type skyrmions. For SmGe3, a condition for the formation of a superstructure was found, which is important for inducing quantum phase transformations. BiI3 is a typical topological insulator of forced semimetal type with degeneracy at the Fermi level. The structure of the Mg9Ge5.1 is non-commensurate modulated, whereas Yb3Co4Ge13 is the first representative of a 3-dimensionally modulated structure among IMC. Modulation and valence fluctuations of Yb are related and are the basis for the controlled change of properties at low temperatures. Y5Ir6Sn18 is a type II superconductor with Tc = 2.1 K, for which partial disorder does not lead to loss of superconductivity. The modulated Fe0.62Te is a semiconductor with a narrow band gap. More than four dozen objects were studied. A program for integration the density of states distribution was developed.
Product Description
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Akselrud Lev
Belan Bohdana
Broda Anastasiya
Gnilitskyi Yaroslav
Horyn Andriy
Horyacha Myroslava
Dankevych Roman
Demchenko Pavlo
Dzevenko Mariya
Dominyuk Nataliya
Zaremba Nazar
Zaremba Oksana
Zelinskiy Anatoliy
Konyk Mariya
Kuzhel Bohdan
Manyako Mykola
Matviyishyn Lyudmyla
Matselko Oksana
Muts Nataliya
Oshchapovskyy Ihor
Pukas Svitlana
Semuso Nataliya
Serkiz Roman
Tarasiuk Ivan
Tokaychuk Yaroslav
Shpyrka Zinoviya
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2023-02-09
