Registration Number
0223U004944,
(0123U103735)
, R & D reports
Title
Development of nanocomposite material technology for highly efficient absorption of electromagnetic radiation
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Розроблення технологічних процесів отримання нанокомпозит них плівок FexOy(Fe)SiOx методами іонноплазмового та магнетронног о осадження.
Head
Evtukh Anatolii A., Доктор фізико-математичних наук
Registration Date
10-12-2023
Organization
V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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The main goal of the project is to develop the technology for obtaining a highly efficient broadband electromagnetic (microwave) radiation absorber based on FexOy(Fe)SiOx nanocomposite films for protecting electronic equipment and people to be used in security, military and health systems.
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The report is presented in one volume: 70 p., 29 fig., 4 tabl., 68 sources.
Key words: ION PLASMA TECHNOLOGY, ELECTRICAL CONDUCTIVITY, IRON AND SILICON INCLUSIONS, NANOCOMPOSITE FILMS, OXIDE MATRICES, STRUCTURE AND COMPOSITION, TECHNOLOGIES, THERMAL ANNEALINGS, PHYSICAL PROPERTIES.
The object of the research is the ion-plasma technology for obtaining and structural and electrical properties of FexOy(Fe)SiOx nanocomposite films containing iron nanoinclusions in the oxide matrix.
The goal of the project is to develop the technology for obtaining a highly efficient broadband absorber of electromagnetic (microwave) radiation based on FexOy(Fe)SiOx nanocomposite films for the protection of electronic equipment and people when used in security, military and health systems.
As a result of the implementation of this stage of the project, the technological processes of deposition of FexOy(Fe)SiOx nanocomposite films by the ion-plasma sputtering method were developed, the films were obtained in different technological conditions and their structural and electrical properties were investigated.
During the development of technological processes, the main fixed parameters of the technological process of obtaining FexOy(Fe)SiOx nanocomposite films by the ion-plasma deposition method were established, the original target for sputtering FexOy(Fe)SiOx films with different ratios of iron and silicon was developed and manufactured. Experimental samples with FexOy(Fe)SiOx films with the change in the Fe/Si ratio at the fixed thickness and O2/Ar ratio, with the change in the O2/Ar ratio at the fixed thickness and Fe/Si ratio, with the change in thickness at the fixed Fe/Si and O2/Ar ratios were obtained and investigated.
It was established that the structural and phase transformations of nanocomposite FexOy(Fe)SiOx films already begin at the annealing temperature of T = 300 С.
Mechanisms of electronic transport was determined.
Product Description
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Yevtukh Anatolii A.
Antonin Serhii Volodymyrovych
Bratus Oleh L.
Voitovych Маriіa V.
Kyziak Anatolii Yu.
Muryi Yaroslav Yuriyovych
Pylypova Olha
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2026-06-23
