Registration Number
0224U031388,
0122U000942
, R & D reports
Title
Effective materials for semiconductor technology based on chalcogenides and metal halides
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Head
Olekseiuk Ivan D., д.х.н.
Registration Date
19-04-2024
Organization
Lesya Ukrainka Volyn National University
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Crystal growth technology was developed for compounds AgGaGeS4, AgGaGe3Se8, AgGaGe5Se12, Ag2GeS3, AgAs3Se5, Ag2SnAs6Se12, doped with two rare earths simultaneously. Stable and metastable phase diagrams of the Ag2S(Se)–Ge(Sn)S(Se)2–As2S(Se)3 systems in the entire concentration range were constructed. Crystal structure of new quaternary compounds AIBIII2X3Hal where AI – Cu, Ag; BIII – Ga, In; X S, Se, Te, was determined. Concentration limits of rare earth doping in the Ga2S3–Ge(Sn)S2–As(Sb)2S3 systems were determined. Absorption spectra of doped and undoped chalcogenides and chalcohalides were studied.
Glass formation regions were established in the AgHal–Ga2S3–La2S3 systems (50–75 mol.% Ga2S3 at the La2S3–Ga2S3 section and up to 5–6 mol.% AgHal). Optical absorption spectra of glasses of the Ga2S3–La2S3–Er2S3–AgCl(I) systems in the 4000–10500 Å range were studied at room temperature. The glasses are transparent in the visible range and contain narrow absorption bands in Er-doped samples.
Photoluminescence (PL) spectra of glasses of the AgHal–Ga2S3–La2S3 systems doped with Er2S3 when excited by a 532 nm laser were studied. Three intense PL maxima (660, 810, 855 nm) and one of lower intensity (980 nm) were recorded. The resulting emission bands are associated with transitions in the 4f shell of erbium ions. PL intensity decreases with the increase of Er2S3 content due to the concentration quenching.
The glass formation regions in the quasi-ternary systems Ag2S–GeS2–As(Sb)2S3 occupy over half of the triangle area. The maximum Ag2S content incorporated in the glass is 70 mol.% Ag2S on the Ag2S–As2S3 side and 55 mol.% Ag2S on the Ag2S–GeS2 side. Alloys with composition of 50 mol.% Ag2S – (48–х) mol.% GeS2 – 2 mol.% Nd2S3 – х mol.% Er2S3 and 20 mol.% Ag2S – 60 mol.% GeS2 – (18-y) mol.% Sb2S3 – 2 mol.% Nd2S3 – х mol.% Er2S3, where x=1, 2, 3, 4, were chosen for the study of PL properties with double doping.
Product Description
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Inna A. Ivashchenko
Halian Volodymyr V.
Halian Volodymyr V
Kohut Yurii M.
Liudmyla V. Piskach
Pankevych Volodymyr Z.
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2024-04-19
