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Information × Registration Number 0225U002813, (0120U102191) , R & D reports Title Diffraction in the field of anomalous dispersion of X-rays: New opportunities in the diagnosis of nanostructures popup.stage_title Дифракція в області аномальної дисперсії Х-променів: Нові можливості в діагностиці наноструктур Head Kladko Vasyl P., Доктор фізико-математичних наук Registration Date 07-04-2025 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 The development of diffraction methods for the diagnosis of nanomaterials in a wide range of changes in their dimensions and crystalline structure, the study of the possibility of changing the electrophysical parameters by controlled influence on the deformation state of nanosystems. popup.description2 The effect of ultrasonic vibrations on the transport characteristics of AlGaN/GaN heterostructures has been investigated. It has been found that the treatment of the sample with ultrasonic vibrations leads to acoustic conductivity (PAC), which is significant up to room temperatures. It has been shown that the PAC transient characteristics correlate with the effect of persistent photoconductivity (PPC) caused by deep-level impurities. t is shown that the dynamic deformation method will be a useful and informative tool for determining transport (2DEG) in AlGaN/GaN heterostructures. The methodological basis of structural studies has been developed and supplemented based on the use of a modern complex of equipment for high-resolution X-ray diffractometric and reflectometric diagnostics. Product Description popup.authors Hudymenko Oleksandr Yo. Liubchenko Oleksii I. Maksymenko Zoia V. Polischuk Yuliia O. Safriuk Nadiia V. Slobodian Mykola V. popup.nrat_date 2025-04-07 Close
R & D report
Head: Kladko Vasyl P.. Diffraction in the field of anomalous dispersion of X-rays: New opportunities in the diagnosis of nanostructures. (popup.stage: Дифракція в області аномальної дисперсії Х-променів: Нові можливості в діагностиці наноструктур). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U002813
1 documents found

Updated: 2026-03-24