Registration Number
0225U004923,
(0124U003608)
, R & D reports
Title
Development and characterization of 2D MoS2 based MOSFET devices
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Дослідження впливу ВЧ плазми на фізичні властивості тонких шарів MoS2 та вивчення електричних параметрів вихідних структур MoS2/діелектрик
Head
Nazarov Oleksii M., д.ф.-м.н.
Registration Date
22-12-2025
Organization
V. Lashkaryov Institute of Semiconductor Physics of National Academy
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Fabrication of 2D MoS2 based MOSFET with high-quality interfaces between 2D semiconductor film and dielectric layers and with a minimum charge in the gate dielectric
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At the first stage of the project, the effect of RF plasma treatment in a nitrogen-hydrogen gas mixture and argon on the electrical and physicochemical properties of ultrathin films and micron pieces of molybdenum bisulfite (MoS2) has been studied. It was shown that the used plasma treatments lead to an increase in the stress in the crystal lattice of the MoS2 structure, as well as a significant decrease in the electrical resistance of thin microcrystalline films and micron flakes of MoS2, that is very important for the formation of field-effect transistors channel, which usually has significant resistance.
Initial studies of field-effect transistors manufactured on MoS2/SiO2/Si structures with an open surface of a single-layer 2D MoS2 film, that were manufactured at the Advanced Microelectronic Center of Aachen (AMICA, Germany), were carried out. The main electrical characteristics of the obtained devices are determined: threshold voltage, subthreshold slope, maximum and minimum current in the channel, density of surface statesand border traps at the MoS2/SiO2 interface. Based on the obtaineddata, the recommendations for improvement the characteristics of MoS2based transistors with 2D channels on have been developed.
Product Description
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Tiahulskyi Ihor P.
Yurii V. Homeniuk
Tamara O. Rudenko
Dmytro V. Kysil
Oleksii M. Nazarov
Oleksandr M. Slobodian
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2025-12-22
