Registration Number
0226U001589,
(0121U108191)
, R & D reports
Title
Investigation of functional properties of semiconductor and epoxy composite materials
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Дослідження функціональних властивостей напівпровідникових та епоксикомпозитних матеріалів
Head
Luniov Sergiy Valentynovych, к.ф.-м.н.
Registration Date
28-01-2026
Organization
Lutsk National Technical University
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The purpose of this work is to study the functional properties of electronic equipment materials and possible ways to modify these properties using the method of radiation technologies. To achieve this goal it is necessary the investigation of electrical, tensoelectric, galvanomagnetic, optical properties of bulk single crystals of germanium, silicon, cadmium antimonide, oxygen-containing zinc compounds, nanostructures based on these semiconductor materials, as well as shielding properties of epoxy composite materials, which is important for increasing the radiation resistance of semiconductors by the method of local protection.
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The scientific work carried out comprehensive studies of the physical and operational properties of semiconductors (Ge, Si, CdSb, oxygen-containing Zn compounds) and polymer composite materials based on epoxy resin. In particular, the mechanisms of electron transfer, annealing processes, optical absorption in semiconductor structures, as well as the regularities of structure formation and the shielding properties of polymer composites, were studied to develop new functional materials for electronic equipment and methods for their modification using doping and radiation technologies. The work used experimental methods such as measuring electrical conductivity, the Hall effect, tensile strength, and tenso-Hall effect during uniaxial elastic deformation; IR-Fourier spectroscopy; and methods for determining compressive strength and hardness for epoxy composites. Irradiation of samples was carried out on a microtron M-30. Theoretical calculations of the band structure and parameters of quantum wells were performed using MathCAD 14, based on the deformation-potential theory. Based on the conducted studies, the patterns of changes in the electrical, galvanomagnetic, and optical properties of single crystals and nanostructures of Ge, Si, and CdSb under the influence of radiation and deformation were established. The parameters governing the shielding properties of epoxy composites were determined, enabling local protection of semiconductor elements. The effectiveness of radiation technologies for targeted changes in material characteristics has been proven. The results obtained can be applied to the design of radiation-resistant temperature sensors, Hall sensors, and photosensitive elements for IR technology, as well as to the development of protective epoxy coatings for the operation of devices in environments with increased radiation backgrounds.
Product Description
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Serhii Lunov
Koval Yuriy V
Pasternak Roman M
Zakharchuk Dmytro A
Yashchynskyy Leonid V
Panasyuk Leonid I
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2026-01-28
