Registration Number
0302U001507,
0101U003490
, R & D reports
Title
The study of the processes of formation and properties of RE metal doped films on the basis of carbon
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Вивчення процесів іонно-плазменого осадження легованих алмазоподібних плівок. Дослідження умов низько і високотемпературних відпалів легованих плівок для утворення оптично-активних положень РЗ іонів.
Head
Puzikov V.M.,
Registration Date
12-03-2002
Organization
Department of Optical and Constructional Crystals of STC <Institute for Single Crystals>
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The process of formation of silicon carbide films deposition under conditions of plasma flux, generated by vacuum-arc source have been studied. The dependence of film composition on energy of the deposition ions has been found. Conditions of deposition of nano-crystalline SiC films of the stoichiometric composition have been found. The developed method of plasma deposition of silicon carbide films ensures application of SiC films of stoichiometric composition on the substrates at room temperature at a rate of about 20-30 nm·s-1. Using this method for the first time obtained were nanocrystalling film systems on the basis of silicon carbide films: n-SiC:Ce, n-SiC:Pr, n-SiC:Eu, n-SiC:N, n-SiC:ZnS, n-SiC:CdS, which are considered as promising film materials for luminescence, photon and electron devices.5635
Product Description
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2020-04-03
