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Information × Registration Number 0314U004020, 0113U007068 , R & D reports Title The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt popup.stage_title Розроблення технологій виробництва гетероепітаксійних квантоворозмірних світлодіодних структур на основі InGaN/GaN/Al2O3 методом газофазної епітаксії з металоорганічних сполук з енергетичною ефективністю більш як 80 Лм/Вт Head Krukovskii Semen, Registration Date 23-01-2014 Organization Public Joint-stock Company "Scientific and industrial concern "Nauka" popup.description2 Technological process of formation of light-emitting diode structures AlGaN/InGaN/GaN/Al2O3 by a method of vapor phase epitaxy from metalloorganic connections, with qualitative heteroborders Inх2Ga1-х2N/p-AlхGa1-хN, p-AlхGa1-хN/p-GaN and morphology of a surface of a contact layer that has in aggregate provided achievement of their power efficiency more than 80 Lm/Vt is optimised as a whole. Optimum technological modes of formation of two-layer contact epitaxial layer GаN with p-type of conductivity alloyed by magnesium that has provided possibility of crystallisation of layers with concentration of holes to 2х10^19 см^-3 of qualitative morphology of a surface are developed. Product Description popup.authors Круковський Р.С. Круковський С.І. Михащук Ю.М. Мрихін І.О. Парфенюк П.В. popup.nrat_date 2020-04-02 Close