Registration Number
0314U004020,
0113U007068
, R & D reports
Title
The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 80 Lm/Wt
popup.stage_title
Розроблення технологій виробництва гетероепітаксійних квантоворозмірних світлодіодних структур на основі InGaN/GaN/Al2O3 методом газофазної епітаксії з металоорганічних сполук з енергетичною ефективністю більш як 80 Лм/Вт
Head
Krukovskii Semen,
Registration Date
23-01-2014
Organization
Public Joint-stock Company "Scientific and industrial concern "Nauka"
popup.description2
Technological process of formation of light-emitting diode structures AlGaN/InGaN/GaN/Al2O3 by a method of vapor phase epitaxy from metalloorganic connections, with qualitative heteroborders Inх2Ga1-х2N/p-AlхGa1-хN, p-AlхGa1-хN/p-GaN and morphology of a surface of a contact layer that has in aggregate provided achievement of their power efficiency more than 80 Lm/Vt is optimised as a whole. Optimum technological modes of formation of two-layer contact epitaxial layer GаN with p-type of conductivity alloyed by magnesium that has provided possibility of crystallisation of layers with concentration of holes to 2х10^19 см^-3 of qualitative morphology of a surface are developed.
Product Description
popup.authors
Круковський Р.С.
Круковський С.І.
Михащук Ю.М.
Мрихін І.О.
Парфенюк П.В.
popup.nrat_date
2020-04-02
