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Krukovskyi Rostyslav Semenovich. Modification of galvanomagnetic properties of multilayer structures based on GaAs, InP, InAs for elements of electronic equipment devices : к.т.н. : spec.. 05.27.06 - Технологія, обладнання та виробництво електронної техніки : presented. 2015-03-26; popup.evolution: .; Lviv Polytechnic National University. – , 0415U001988.

Head: Belyaev Alexander. Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0215U003443

Head: Belyaev Alexander. Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0214U001867

Head: Кoman Bogdan. Creation of measuring complex to research parameters of solar energy fotoconverters during the production process. (popup.stage: ). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0214U008551

Head: Galstjan George. Development of nanotechnologies of molecular radial epitaxy and concentrated ionic beams for their use in the production of nanotechnology complex "NanoFAB" (the third stage). (popup.stage: ). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0214U008550

Head: Коман Богдан Петрович. Creation of measuring complex to research parameters of solar energy fotoconverters during the production process. The closed Joint-stock Company "Research-and-production concern "Science". № 0113U006114

Head: Круковський Семен Іванович. Development of nanotechnologies for manufacturing low-dimensional emitters based on semiconductor geteroepitaxial nanostructures А3В5 with modified surface. The closed Joint-stock Company "Research-and-production concern "Science". № 0113U006113

Head: Галстян Геворк Гагікович. Development of nanotechnologies of molecular radial epitaxy and concentrated ionic beams for their use in the production of nanotechnology complex "NanoFAB" (the third stage). The closed Joint-stock Company "Research-and-production concern "Science". № 0113U006112

Head: Belyaev Alexander Євгенович. Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy. V. Lashkaryov Institute of semiconductor physics. № 0114U001970

Head: Kaplunenko Vladimir. Research on regulatory, scientific and metodological base regarding dietary nourishment and special purpose food products manufacturing to prevent occupational diseases. (popup.stage: ). The Ukrainian State Scientific Research Institute of Nanobiotechnologies and Resource Reservation. № 0214U001690