Registration Number
2122U008583, Article
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Тези
Title
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Osadchuk O.
Martyniuk V.
Semenova O.
Semenov A.
Martyniuk H.
Sydoruk T.
Осадчук О. В.
Мартинюк В. В.
Семенова О. О.
Семенов А. О.
Сидорук Т. І.
Мартинюк Г. І.
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29-04-2022
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Вінницький національний технічний університет
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http://ir.lib.vntu.edu.ua/handle/123456789/35217
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Lviv Polytechnic National University
Description
A new stuff, heterometallic barium di[N,N'-bis(salicylidene)thiosemicarbazidatocuprate (II)] monohydrate(I) with such composition Ba[CuL']·Н2О, where H3L = N, N'-bis(salicylidene)thiosemicarbazide, has been synthesized. Investigations of electrical conductive properties for the compound I as compressed cylindrical specimen showed that its specific resistance was 6·1012 Ohm·cm at 313 K temperature, and there was a rectilinear relationship between the specific resistance and the temperature at the temperature rising from 313 K to 413 K, which was typical for semiconductor materials. Calculated at 333 K values of a temperature coefficient of resistance (TCR) for compound I (-11.39% K-1) and sensitivity (B) of the semiconductor stuff (12630 K) confirm that this compound is a semiconductor of medium sensitivity in the 313~413 K operating temperature range.
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2026-10-22
