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Інформація × Реєстраційний номер 2118U001540, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Formation of the Microcrystalline Structure in LiNbO3 Thin Films by Pulsed Light Annealing Автор Дата публікації 01-01-2018 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/68698 Видання Sumy State University Опис LiNbO3 thin films with a thickness of 200 nm were deposited onto Al2O3 substrate by RF-magnetron sputtering technique without intentional substrate heating. The results demonstrate that post-growth infrared pulsed light annealing of the amorphous LiNbO3 films leads to the formation of two phases, LiNbO3 and LiNb3O8. After annealing at temperatures of 700 to 800 °C, the percentage of the nonferroelectric phase LiNb3O8 was minimal. The surface composition of the films annealed at different temperatures was examined by X-ray photoelectron spectroscopy. Piezoresponse force microscopy was used to study both the vertical and the lateral polarization and to visualize the piezoelectric inactivity of LiNb3O8 grains. A comparison of the results of PFM and XPS measurements revealed that there is a correlation between the fraction of the piezoelectric phase and the film composition: At an annealing temperature higher than 850 °C, the atomic ratio of lithium to niobium decreases compared to the initial value along with a decrease of the fraction of the piezoelectric phase. Додано в НРАТ 2025-03-24 Закрити