Registration Number
0213U004816,
0113U006010
, R & D reports
Title
Device Inspiring Research and Technology Demonstration and Assessments for High-Speed and Low-Energy Nanowire Transistors
popup.stage_title
Head
Kochelap Vyacheslav Olexandrovich,
Registration Date
26-12-2013
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
popup.description2
Under this stage the study of high-field electron transport in structures based on AlGaN/GaN heterostructures has been carried out. The theoretical models of the calculations of potential profiles and transport characteristics have been developed for the structures under investigation. For the analysis of the effects of real-space transfer that can be taken place in the systems with low-dimensional electrons between delta-doping barriers it has been proposed two models of the moderate and strong barriers doping. Both electron heating and electrostatic screening effects have been taken into account for both models. These models have been adopted for qualitative and quantitative explanations of experimental results. The samples with GaN-nanowires of different length and width have been fabricated by group of German partners. The parameters of electron gas have been determined and current-voltage characteristics have been measured. The observed non-ohmic and super-linear behavior are related to the effects of space charge limited electron transport.
Product Description
popup.authors
А. В. Наумов
В.В. Коротєєв
О. Є. Бєляєв
Ю. М. Лящук
popup.nrat_date
2020-04-02
