Registration Number
0221U100360,
0120U102292
, R & D reports
Title
Development of processes for the formation of periodic ordered plasmon nanostructures by the method of interference photolithography based on chalcogenide semiconductors, the production of experimental samples and the study of their characteristics.
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Head
Indutnyi Ivan Z., Доктор фізико-математичних наук
Registration Date
04-01-2021
Organization
V. Lashkaryov Institute of semiconductor physics
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Optimization of the formation processes of periodic plasmonic nanostructures with correlated relief was carried out, which included optimization of the process of deposition an adhesive layer and a vacuum chalcogenide photoresist, exposure, post-exposure treatment, and deposition of a plasmon-supporting layer. Technological instructions have been developed for implementing the process of forming periodic plasmonic nanostructures with correlated relief by interference lithography using vacuum chalcogenide photoresists. Experimental samples of one-dimensional (gratings) and two-dimensional (matrices) plasmonic nanostructures with correlated relief based on layers of gold, silver and aluminum have been prepared. The spatial frequency range of the fabricated laterally ordered structures is 800 - 4000 mm-1, the modulation depth is within 5 - 31%.
Product Description
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Dan'ko Viktor A.
Lukaniuk Mariia V.
Mynko Viktor I.
Sopinskyy Mykola V.
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2021-01-04
