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Head: Oleksii M. Nazarov. Development and research of functional nanomaterials and devices for THz and IR photoelectronics, micro- and nanoelectronics, biomedicine. (popup.stage: Розроблення та дослідження функціональних наноматеріалів і приладів для ТГц та ІЧ фотоелектроніки, мікро- і наноелектроніки, біомедицини.). V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine. № 0226U001269

Head: Bieliaiev Oleksandr Ye.. Investigation of electrical, optical, magnetic and acoustic properties of newest semiconductor materials and nanostructures, promising for use in nanoelectronics, nanophotonics and nanoacoustics. (popup.stage: Дослідження електричних, оптичних, магнітних та акустичних властивостей новітніх напівпровідникових матеріалів та наноструктур, перспективних для застосування в приладах наноелектроніки, нанофотоніки та наноакустики). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0226U000823

Head: Bieliaiev Oleksandr Ye.. New plasmonic and phonon phenomena and technologies for nano- and optoelectronic devices. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0223U001414

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodically ordered plasmonic nanostructures by interference photolithography based on chalcogenide semiconductors, production of experimental samples and study of their characteristics. Stage 2 "Study of morphological and optical characteristics of experimental samples of PPN with correlated relief". (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0222U002223

Head: Danko Viktor A.. "New plasmonic nanomaterials based on laterally-ordered structures of noble metals for precise, rapid analysis of macromolecular compounds by spectroscopy of surface-enhanced Raman light scattering". Stage 2: Production of experimental samples of substrates with clarified characteristics of nanocavities and study of their morphological and optical characteristics.. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0221U101544

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodic ordered plasmon nanostructures by the method of interference photolithography based on chalcogenide semiconductors, the production of experimental samples and the study of their characteristics.. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0221U100360

Head: Dan'ko Viktor A.. New plasmonic nanomaterials based on laterally-ordered structures of noble metals for precise, rapid analysis of high-molecular compounds by spectroscopy of surface-enhanced Raman light scattering. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0219U102201

Head: Indutnyi Ivan. Development of technology for production of sensor chips with increased sensitivity and improved physical - mechanical characteristics of for the optical sensors based on surface plasmon resonance (SPR). (popup.stage: ). V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine. № 0216U002891

Head: Indutnyi Ivan. "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 5 stage - "Investigation and development of solid-immersion photolithography on the basis of chalcogenide photoresists.". (popup.stage: ). V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine. № 0214U000982

Head: Indutnyi Ivan. "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 4 stage - "Development and investigation of liquid immersion photolithography on the basis of chalcogenide photoresists.". (popup.stage: ). V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine. № 0213U004608