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Information × Registration Number 0110U005794, ( 0211U001026  ) R & D request Title "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 1 stage-"Optimisation of the vacuum deposition processes of chalcogenide photoresists and investigation of phostimulated changes of their dissolution. Development of high-effective selective etchants" Head Indutnyi Ivan , Доктор фізико-математичних наук Registration Date 07-10-2010 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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"Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 1 stage-"Optimisation of the vacuum deposition processes of chalcogenide photoresists and investigation of phostimulated changes of their dissolution. Development of high-effective selective etchants"
Head: Indutnyi Ivan . "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 1 stage-"Optimisation of the vacuum deposition processes of chalcogenide photoresists and investigation of phostimulated changes of their dissolution. Development of high-effective selective etchants". V. Lashkaryov Institute of semiconductor physics. № 0110U005794
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Updated: 2026-03-19


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