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Information × Registration Number 0111U003021, ( 0212U004899  ) R & D request Title Development of the technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices Head Пузіков Вячеслав Михайлович, Registration Date 15-03-2011 Organization Institute for single crystals NASU popup.description1 popup.nrat_date 2024-12-10 Close
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Development of the technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices
Head: Пузіков Вячеслав Михайлович. Development of the technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices. Institute for single crystals NASU. № 0111U003021
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Updated: 2026-03-22


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